公开(公告)号：US07648848B2

公开(公告)日：2010-01-19

申请号：US12073493

申请日：2008-03-06

Applicant: Michihiro Ebe ,  Masao Okihara

Inventor： Michihiro Ebe ,  Masao Okihara

IPC: H01L21/66 ,  H01L21/00 ,  H01L21/84 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L22/20 ,  H01L21/2007 ,  H01L22/12

Abstract: A semiconductor integrated circuit production method prepares an SOI layer thickness database that correlates measurement data of each SOI layer thickness with each SOI substrate identification data. The production method extracts the measurement data for each SOI substrate from the SOI layer thickness database, and carries out layer thickness adjustment surface treatment for the SOI substrates based on these data. A semiconductor integrated circuit production device includes an SOI layer thickness database storage unit for storing the SOI layer thickness database, and a layer thickness adjustment conditions control unit for extracting the measurement data for each SOI substrate from the SOI layer thickness database and deciding conditions for the layer thickness adjustment surface treatment based on these data. The semiconductor integrated circuit production device also includes a surface treatment unit that adjusts SOI layer thickness by carrying out the surface treatment on the SOI layers in accordance with the decided conditions.

Abstract translation: 半导体集成电路制造方法制备将每个SOI层厚度的测量数据与每个SOI衬底识别数据相关联的SOI层厚度数据库。 该制造方法从SOI层厚度数据库中提取每个SOI衬底的测量数据，并且基于这些数据对SOI衬底进行层厚调整表面处理。 半导体集成电路制造装置包括用于存储SOI层厚度数据库的SOI层厚度数据库存储单元和用于从SOI层厚度数据库提取每个SOI衬底的测量数据的层厚调整条件控制单元， 基于这些数据的层厚调整表面处理。 半导体集成电路制造装置还包括：表面处理单元，其通过根据所确定的条件对SOI层进行表面处理来调整SOI层的厚度。

公开(公告)号：US20110241129A1

公开(公告)日：2011-10-06

申请号：US13072914

申请日：2011-03-28

Applicant: Michihiro Ebe

Inventor： Michihiro Ebe

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7834 ,  H01L21/26586 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6659

Abstract: The present invention provides a transistor, a semiconductor device and a transistor fabrication process that thoroughly ameliorate electric fields in a transistor element. Namely, the transistor includes a semiconductor substrate, incline portions, a gate electrode, side walls, and a source and a drain. The semiconductor substrate includes a protrusion portion at a surface thereof. The incline portions constitute side surface portions of the protrusion portion and are inclined from the bottom to the top of the protrusion portion. The gate electrode is formed on the top of the protrusion portion, with a gate insulation film interposed therebelow. The side walls are formed on the top of the protrusion portion at two side surfaces of the gate electrode and the gate insulation film. The source and the drain each include a low density region and a high-density region.

Abstract translation: 本发明提供一种能够彻底改善晶体管元件中的电场的晶体管，半导体器件和晶体管制造工艺。 即，晶体管包括半导体衬底，倾斜部分，栅极电极，侧壁以及源极和漏极。 半导体衬底在其表面上包括突出部分。 倾斜部分构成突起部分的侧表面部分并且从突出部分的底部向顶部倾斜。 栅电极形成在突起部的顶部，栅极绝缘膜插入其中。 侧壁在栅电极和栅极绝缘膜的两个侧表面处形成在突出部分的顶部上。 源极和漏极各自包括低密度区域和高密度区域。

公开(公告)号：US20080233664A1

公开(公告)日：2008-09-25

申请号：US12073493

申请日：2008-03-06

Applicant: Michihiro Ebe ,  Masao Okihara

Inventor： Michihiro Ebe ,  Masao Okihara

IPC: H01L21/66 ,  C23F1/08

CPC classification number: H01L22/20 ,  H01L21/2007 ,  H01L22/12

Abstract: A semiconductor integrated circuit production method prepares an SOI layer thickness database that correlates measurement data of each SOI layer thickness with each SOI substrate identification data. The production method extracts the measurement data for each SOI substrate from the SOI layer thickness database, and carries out layer thickness adjustment surface treatment for the SOI substrates based on these data. A semiconductor integrated circuit production device includes an SOI layer thickness database storage unit for storing the SOI layer thickness database, and a layer thickness adjustment conditions control unit for extracting the measurement data for each SOI substrate from the SOI layer thickness database and deciding conditions for the layer thickness adjustment surface treatment based on these data. The semiconductor integrated circuit production device also includes a surface treatment unit that adjusts SOI layer thickness by carrying out the surface treatment on the SOI layers in accordance with the decided conditions.

Abstract translation: 半导体集成电路制造方法制备将每个SOI层厚度的测量数据与每个SOI衬底识别数据相关联的SOI层厚度数据库。 该制造方法从SOI层厚度数据库中提取每个SOI衬底的测量数据，并且基于这些数据对SOI衬底进行层厚调整表面处理。 半导体集成电路制造装置包括用于存储SOI层厚度数据库的SOI层厚度数据库存储单元和用于从SOI层厚度数据库提取每个SOI衬底的测量数据的层厚调整条件控制单元， 基于这些数据的层厚调整表面处理。 半导体集成电路制造装置还包括：表面处理单元，其通过根据所确定的条件对SOI层进行表面处理来调整SOI层的厚度。