Invention Application
- Patent Title: SEMICONDUCTOR DEVICE HAVING A BLOCKING STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 具有阻塞结构的半导体器件及其制造方法
-
Application No.: US12753372Application Date: 2010-04-02
-
Publication No.: US20110241130A1Publication Date: 2011-10-06
- Inventor: Bor-Wen CHAN , Hsueh Wen Tsau
- Applicant: Bor-Wen CHAN , Hsueh Wen Tsau
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/532 ; H01L21/768 ; H01L21/3205
Abstract:
A semiconductor device includes a blocking structure between a metal layer and at least one underlying layer. The blocking structure has a first layer configured for preventing diffusion of metal from the metal layer into the at least one underlying layer, and a second layer configured for enhancing electrical performance of the semiconductor device.
Public/Granted literature
- US08564072B2 Semiconductor device having a blocking structure and method of manufacturing the same Public/Granted day:2013-10-22
Information query
IPC分类:
