Invention Application
US20110241175A1 HARDMASK COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
审中-公开
用于形成电阻膜的HARDMASK组合物，用于制造半导体集成电路器件的工艺和半导体集成电路器件
- Patent Title: HARDMASK COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Patent Title (中): 用于形成电阻膜的HARDMASK组合物，用于制造半导体集成电路器件的工艺和半导体集成电路器件
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Application No.: US13160544Application Date: 2011-06-15
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Publication No.: US20110241175A1Publication Date: 2011-10-06
- Inventor: Sang Ran KOH , Sang Kyun KIM , Sang Hak LIM , Mi Young KIM , Hui Chan YUN , Do Hyeon KIM , Dong Seon UH , Jong Seob KIM
- Applicant: Sang Ran KOH , Sang Kyun KIM , Sang Hak LIM , Mi Young KIM , Hui Chan YUN , Do Hyeon KIM , Dong Seon UH , Jong Seob KIM
- Priority: KR10-2008-0128625 20081217
- Main IPC: H01L29/02
- IPC: H01L29/02 ; C08G77/38 ; H01L21/31
Abstract:
A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhydride, methyl acetoacetate, propionic anhydride, ethyl-2-ethylacetoacetate, butyric anhydride, ethyl-2-ethylacetoacetate, valeric anhydride, 2-methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, and mixtures thereof.
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