公开(公告)号：US20110241175A1

公开(公告)日：2011-10-06

申请号：US13160544

申请日：2011-06-15

申请人： Sang Ran KOH ,  Sang Kyun KIM ,  Sang Hak LIM ,  Mi Young KIM ,  Hui Chan YUN ,  Do Hyeon KIM ,  Dong Seon UH ,  Jong Seob KIM

发明人： Sang Ran KOH ,  Sang Kyun KIM ,  Sang Hak LIM ,  Mi Young KIM ,  Hui Chan YUN ,  Do Hyeon KIM ,  Dong Seon UH ,  Jong Seob KIM

IPC分类号： H01L29/02 ,  C08G77/38 ,  H01L21/31

CPC分类号： G03F7/0752 ,  C08G77/18 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332

摘要： A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhydride, methyl acetoacetate, propionic anhydride, ethyl-2-ethylacetoacetate, butyric anhydride, ethyl-2-ethylacetoacetate, valeric anhydride, 2-methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, and mixtures thereof.

摘要翻译： 用于形成抗蚀剂下层膜的硬掩模组合物，半导体集成电路器件的制造方法和半导体集成电路器件，所述硬掩模组合物包含有机硅烷聚合物和稳定剂，所述稳定剂包括乙酸酐，乙酰乙酸甲酯， 丙酸酐，2-乙基乙酰乙酸乙酯，丁酸酐，2-乙基乙酰乙酸乙酯，戊酸酐，2-甲基丁酸酐，壬醇，癸醇，十一烷醇，十二烷醇，丙二醇丙醚，丙二醇乙醚，丙二醇甲醚，丙烯 乙二醇，苯基三甲氧基硅烷，二苯基六甲氧基二硅氧烷，二苯基六乙氧基二硅氧烷，二辛基四甲基二硅氧烷，六甲基三硅氧烷，四甲基二硅氧烷，十甲基四硅氧烷，十二甲基五硅氧烷，六甲基二硅氧烷及其混合物。