发明申请
- 专利标题： Radiate Under-Bump Metallization Structure for Semiconductor Devices
- 专利标题（中）： 辐射半导体器件的欠冲击金属化结构
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申请号： US12750221申请日： 2010-03-30
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公开(公告)号： US20110241201A1公开(公告)日： 2011-10-06
- 发明人: Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
- 申请人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L21/768
摘要：
An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.
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