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公开(公告)号：US08294264B2
公开(公告)日：2012-10-23
申请号：US12750221
申请日：2010-03-30
申请人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
发明人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
CPC分类号： H01L24/05 , H01L24/03 , H01L24/04 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0347 , H01L2224/03828 , H01L2224/0401 , H01L2224/05551 , H01L2224/05552 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/1147 , H01L2224/13007 , H01L2224/13015 , H01L2224/13111 , H01L2224/13116 , H01L2224/16145 , H01L2224/16225 , H01L2224/97 , H01L2225/06513 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/00012
摘要： An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.
摘要翻译： 提供了一种用于半导体器件的凸块下金属化（UBM）结构。 UBM结构具有从中心部分延伸出的中心部分和延伸部分。 延伸部可以具有任何合适的形状，包括四边形，三角形，圆形，风扇，具有延伸部的风扇或具有弯曲表面的改进的四边形。 相邻的UBM结构可以具有相对于彼此对准或旋转的相应延伸部。 焊剂可以施加到延伸部分的一部分，以允许覆盖的导电凸块粘附到延伸部分的一部分上。
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公开(公告)号：US20110241201A1
公开(公告)日：2011-10-06
申请号：US12750221
申请日：2010-03-30
申请人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
发明人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L24/05 , H01L24/03 , H01L24/04 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0347 , H01L2224/03828 , H01L2224/0401 , H01L2224/05551 , H01L2224/05552 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/1147 , H01L2224/13007 , H01L2224/13015 , H01L2224/13111 , H01L2224/13116 , H01L2224/16145 , H01L2224/16225 , H01L2224/97 , H01L2225/06513 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/00012
摘要： An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.
摘要翻译： 提供了一种用于半导体器件的凸块下金属化（UBM）结构。 UBM结构具有从中心部分延伸出的中心部分和延伸部分。 延伸部可以具有任何合适的形状，包括四边形，三角形，圆形，风扇，具有延伸部的风扇或具有弯曲表面的改进的四边形。 相邻的UBM结构可以具有相对于彼此对准或旋转的相应延伸部。 焊剂可以施加到延伸部分的一部分，以允许覆盖的导电凸块粘附到延伸部分的一部分上。
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公开(公告)号：US08847388B2
公开(公告)日：2014-09-30
申请号：US13267200
申请日：2011-10-06
申请人： Chen-Hua Yu , Hung-Pin Chang , An-Jhih Su , Tsang-Jiuh Wu , Wen-Chih Chiou , Shin-Puu Jeng
发明人： Chen-Hua Yu , Hung-Pin Chang , An-Jhih Su , Tsang-Jiuh Wu , Wen-Chih Chiou , Shin-Puu Jeng
CPC分类号： H01L23/293 , H01L23/3192 , H01L24/01 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03912 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05571 , H01L2224/05573 , H01L2224/05582 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10126 , H01L2224/11334 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13006 , H01L2224/13007 , H01L2224/13018 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/15788 , H01L2924/014 , H01L2924/00012 , H01L2924/04941 , H01L2924/01047 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a bump structure formed on a post-passivation interconnect (PPI) line and surrounded by a protection structure. The protection structure includes a polymer layer and at least one dielectric layer. The dielectric layer may be formed on the top surface of the polymer layer, underlying the polymer layer, inserted between the bump structure and the polymer layer, inserted between the PPI line and the polymer layer, covering the exterior sidewalls of the polymer layer, or combinations thereof.
摘要翻译： 半导体器件包括形成在钝化后互连（PPI）线上并由保护结构包围的凸块结构。 保护结构包括聚合物层和至少一个电介质层。 电介质层可以形成在聚合物层的顶表面上，该聚合物层的下面，插入凸起结构和聚合物层之间，插入在PPI线和聚合物层之间，覆盖聚合物层的外侧壁，或 其组合。
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公开(公告)号：US20130087908A1
公开(公告)日：2013-04-11
申请号：US13267200
申请日：2011-10-06
申请人： Chen-Hua YU , Hung-Pin CHANG , An-Jhih SU , Tsang-Jiuh WU , Wen-Chih CHIOU , Shin-Puu JENG
发明人： Chen-Hua YU , Hung-Pin CHANG , An-Jhih SU , Tsang-Jiuh WU , Wen-Chih CHIOU , Shin-Puu JENG
IPC分类号： H01L23/498
CPC分类号： H01L23/293 , H01L23/3192 , H01L24/01 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03912 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05571 , H01L2224/05573 , H01L2224/05582 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10126 , H01L2224/11334 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13006 , H01L2224/13007 , H01L2224/13018 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/15788 , H01L2924/014 , H01L2924/00012 , H01L2924/04941 , H01L2924/01047 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a bump structure formed on a post-passivation interconnect (PPI) line and surrounded by a protection structure. The protection structure includes a polymer layer and at least one dielectric layer. The dielectric layer may be formed on the top surface of the polymer layer, underlying the polymer layer, inserted between the bump structure and the polymer layer, inserted between the PPI line and the polymer layer, covering the exterior sidewalls of the polymer layer, or combinations thereof.
摘要翻译： 半导体器件包括形成在钝化后互连（PPI）线上并由保护结构包围的凸块结构。 保护结构包括聚合物层和至少一个电介质层。 电介质层可以形成在聚合物层的顶表面上，该聚合物层的下面，插入凸起结构和聚合物层之间，插入在PPI线和聚合物层之间，覆盖聚合物层的外侧壁，或 其组合。
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公开(公告)号：US20120049322A1
公开(公告)日：2012-03-01
申请号：US12873931
申请日：2010-09-01
申请人： An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wei-Chih Chiou , Shin-Puu Jeng
发明人： An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wei-Chih Chiou , Shin-Puu Jeng
IPC分类号： H01L29/92 , H01L21/768
CPC分类号： H01L28/40 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/14 , H01L28/92 , H01L2224/0401 , H01L2224/05008 , H01L2224/0557 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13147 , H01L2224/1403 , H01L2224/14181 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.
摘要翻译： 一种装置包括具有与前表面相对的前表面和后表面的基底。 电容器形成在衬底中，并包括第一电容器板; 围绕所述第一电容器板的第一绝缘层; 以及环绕所述第一绝缘层的第二电容器板。 第一电容器板，第一绝缘层和第二电容器板中的每一个从衬底的前表面延伸到后表面。
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公开(公告)号：US08693163B2
公开(公告)日：2014-04-08
申请号：US12873931
申请日：2010-09-01
申请人： An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wen-Chih Chiou , Shin-Puu Jeng
发明人： An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wen-Chih Chiou , Shin-Puu Jeng
IPC分类号： H01L29/92 , H01L21/768
CPC分类号： H01L28/40 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/14 , H01L28/92 , H01L2224/0401 , H01L2224/05008 , H01L2224/0557 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13147 , H01L2224/1403 , H01L2224/14181 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.
摘要翻译： 一种装置包括具有与前表面相对的前表面和后表面的基底。 电容器形成在衬底中，并包括第一电容器板; 围绕所述第一电容器板的第一绝缘层; 以及环绕所述第一绝缘层的第二电容器板。 第一电容器板，第一绝缘层和第二电容器板中的每一个从基板的前表面延伸到后表面。
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