发明申请
US20110241702A1 MEMS-Based Resonant Tunneling Devices and Arrays of Such Devices For Electric Field Sensing
有权
用于电场感测的这种器件的基于MEMS的谐振隧道装置和阵列
- 专利标题: MEMS-Based Resonant Tunneling Devices and Arrays of Such Devices For Electric Field Sensing
- 专利标题(中): 用于电场感测的这种器件的基于MEMS的谐振隧道装置和阵列
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申请号: US12915571申请日: 2010-10-29
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公开(公告)号: US20110241702A1公开(公告)日: 2011-10-06
- 发明人: Ertugrul Berkcan , Naresh Kesa Van Rao , Aaron Knobloch
- 申请人: Ertugrul Berkcan , Naresh Kesa Van Rao , Aaron Knobloch
- 主分类号: G01R27/04
- IPC分类号: G01R27/04
摘要:
A sensor assembly for electric field sensing is provided. The sensor assembly may include an array of Micro-Electro-Mechanical System (MEMS)-based resonant tunneling devices. A resonant tunneling device may be configured to generate a resonant tunneling signal in response to the electric field. The resonant tunneling device may include at least one electron state definer responsive to changes in at least one respective controllable characteristic of the electron state definer. The changes in the controllable characteristic are configured to affect the tunneling signal. An excitation device may be coupled to the resonant tunneling device to effect at least one of the changes in the controllable characteristic affecting the tunneling signal. A controller may be coupled to the resonant tunneling device and the excitation device to control the changes of the controllable characteristic in accordance with an automated control strategy configured to reduce an effect of noise on a measurement of the electric field.
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