发明申请
- 专利标题： METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL
- 专利标题（中）： 制备相变记忆细胞的方法
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申请号： US13132603申请日： 2008-12-30
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公开(公告)号： US20110248233A1公开(公告)日： 2011-10-13
- 发明人: Fabio Pellizzer , Michele Magistretti , Cristina Casellato , Monica Vigilante
- 申请人： Fabio Pellizzer , Michele Magistretti , Cristina Casellato , Monica Vigilante
- 国际申请： PCT/IT2008/000815 WO 20081230
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.
公开/授权文献
- US09111856B2 Method for fabricating a phase-change memory cell 公开/授权日：2015-08-18
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