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发明申请
US20110248372A1 EPITAXIAL SUBSTRATE FOR SOLID-STATE IMAGING DEVICE WITH GETTERING SINK, SEMICONDUCTOR DEVICE, BACK ILLUMINATED SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF 有权
用于固态摄像装置的外部衬底，半导体器件，背面照明的固态成像装置及其制造方法

  • 专利标题： EPITAXIAL SUBSTRATE FOR SOLID-STATE IMAGING DEVICE WITH GETTERING SINK, SEMICONDUCTOR DEVICE, BACK ILLUMINATED SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
  • 专利标题（中）： 用于固态摄像装置的外部衬底，半导体器件，背面照明的固态成像装置及其制造方法
  • 申请号： US13124578
    申请日： 2009-10-16
  • 公开(公告)号： US20110248372A1
    公开(公告)日： 2011-10-13
  • 发明人: Kazunari Kurita
  • 申请人： Kazunari Kurita
  • 申请人地址： JP Tokyo
  • 专利权人： SUMCO CORPORATION
  • 当前专利权人： SUMCO CORPORATION
  • 当前专利权人地址： JP Tokyo
  • 优先权： JP2008-267341 20081016; JP2008-267342 20081016; JP2008-267343 20081016; JP2009-069601 20090323
  • 国际申请： PCT/JP2009/005428 WO 20091016
  • 主分类号： H01L31/02
  • IPC分类号： H01L31/02 ;  H01L21/26
EPITAXIAL SUBSTRATE FOR SOLID-STATE IMAGING DEVICE WITH GETTERING SINK, SEMICONDUCTOR DEVICE, BACK ILLUMINATED SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
摘要：
A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing point (focal point) is positioned at a depth of several tens of gm or so from one surface of the semiconductor wafer. Thereby, the crystal structure of the semiconductor wafer in the position having such a depth is modified, and a gettering sink is formed.
摘要（中）：

将半导体晶片设置在激光照射装置中，并且在半导体晶片移动的同时进行激光束照射。 此时，从激光发生装置发射的激光束被聚光透镜冷凝，使得聚光点（焦点）位于半导体晶片的一个表面的几十μm左右的深度。 由此，改变了具有这样深度的位置的半导体晶片的晶体结构，形成了吸杂槽。

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