发明申请
US20110250396A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
有权
阳离子型感光性树脂组合物，耐蚀图案的制造方法，半导体器件和电子器件
- 专利标题： POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
- 专利标题（中）： 阳离子型感光性树脂组合物，耐蚀图案的制造方法，半导体器件和电子器件
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申请号： US12741854申请日： 2008-11-07
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公开(公告)号： US20110250396A1公开(公告)日： 2011-10-13
- 发明人: Hiroshi Matsutani , Takumi Ueno , Alexandre Nicolas , Ken Nanaumi
- 申请人： Hiroshi Matsutani , Takumi Ueno , Alexandre Nicolas , Ken Nanaumi
- 优先权： JP2007-293631 20071112
- 国际申请： PCT/JP2008/070323 WO 20081107
- 主分类号： B32B3/30
- IPC分类号： B32B3/30 ; G03F7/20 ; G03F7/004
摘要：
A positive-type photosensitive resin composition includes (A) a phenol resin modified by a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms; (B) a compound that produces an acid by light; (C) a thermal crosslinking agent; and (D) a solvent. The positive-type photosensitive resin composition according to the present invention can be developed by an alkaline aqueous solution, and an effect thereof is that a resist pattern having sufficiently high sensitivity and resolution, excellent adhesion, and good thermal shock resistance can be formed.
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