发明申请
US20110250715A1 METHODS FOR FORMING ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS
有权
用于形成CMOS图像传感器的抗反射结构的方法
- 专利标题: METHODS FOR FORMING ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS
- 专利标题(中): 用于形成CMOS图像传感器的抗反射结构的方法
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申请号: US13165375申请日: 2011-06-21
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公开(公告)号: US20110250715A1公开(公告)日: 2011-10-13
- 发明人: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- 申请人: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L31/02
- IPC分类号: H01L31/02 ; H01L21/56
摘要:
Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
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