发明申请
- 专利标题： PLASMA PROCESSING METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS
- 专利标题（中）： 半导体制造装置的等离子体处理方法
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申请号： US13044891申请日： 2011-03-10
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公开(公告)号： US20110250758A1公开(公告)日： 2011-10-13
- 发明人: Hyun-Su JUN , Ki-Sang Kim , Seung-Heong Lee , Jong-Bum Kim , Min-Woung Choi , In-Joong Kim
- 申请人： Hyun-Su JUN , Ki-Sang Kim , Seung-Heong Lee , Jong-Bum Kim , Min-Woung Choi , In-Joong Kim
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0032398 20100408
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
Plasma processing methods of a semiconductor manufacturing apparatus which can minimize the amount of impurities adhered to the surface of a wafer, when a desired process using plasma is performed. According to the plasma processing methods of the semiconductor manufacturing apparatus, after the desired process is completed, the plasma generated over the wafer is diffused, and then the wafer is de-chucked.
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