发明申请
US20110250761A1 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM
有权
等离子体蚀刻方法，等离子体蚀刻装置和计算机可读存储介质
- 专利标题： PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM
- 专利标题（中）： 等离子体蚀刻方法，等离子体蚀刻装置和计算机可读存储介质
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申请号： US13045988申请日： 2011-03-11
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公开(公告)号： US20110250761A1公开(公告)日： 2011-10-13
- 发明人: Sungtae LEE , Masahiro Ogasawara , Junichi Sasaki , Naohito Yanagida
- 申请人： Sungtae LEE , Masahiro Ogasawara , Junichi Sasaki , Naohito Yanagida
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-055896 20100312
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.
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