发明申请
- 专利标题： NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 基于氮化物的半导体器件及其制造方法
-
申请号： US13167064申请日： 2011-06-23
-
公开(公告)号： US20110253977A1公开(公告)日： 2011-10-20
- 发明人: Mitsuaki OYA , Toshiya YOKOGAWA , Atsushi YAMADA , Akihiro ISOZAKI
- 申请人： Mitsuaki OYA , Toshiya YOKOGAWA , Atsushi YAMADA , Akihiro ISOZAKI
- 申请人地址： JP Osaka
- 专利权人： PANASONIC CORPORATION
- 当前专利权人： PANASONIC CORPORATION
- 当前专利权人地址： JP Osaka
- 优先权： JP2009-091514 20090403; JPPCT/JP2009/007284 20091225
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L29/201 ; H01L21/263
摘要：
A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.