发明申请
- 专利标题： TUNNEL FIELD EFFECT TRANSISTOR
- 专利标题（中）： 隧道场效应晶体管
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申请号： US12760287申请日： 2010-04-14
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公开(公告)号： US20110254080A1公开(公告)日： 2011-10-20
- 发明人: Bruce B. Doris , Kangguo Cheng , Wilfried E. Haensch , Ali Khakifirooz , Isaac Lauer , Ghavam G. Shahidi
- 申请人： Bruce B. Doris , Kangguo Cheng , Wilfried E. Haensch , Ali Khakifirooz , Isaac Lauer , Ghavam G. Shahidi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A method for fabricating an FET device characterized as being a tunnel FET (TFET) device is disclosed. The method includes processing a gate-stack, and processing the adjoining source and drain junctions, which are of a first conductivity type. A hardmask is formed covering the gate-stack and the junctions. A tilted angle ion implantation is performed which is received by a first portion of the hardmask, and it is not received by a second portion of the hardmask due to the shadowing of the gate-stack. The implanted portion of the hardmask is removed and one of the junctions is exposed. The junction is etched away, and a new junction, typically in-situ doped to a second conductivity type, is epitaxially grown into its place. A device characterized as being an asymmetrical TFET is also disclosed. The source and drain junctions of the TFET are of different conductivity types, and the TFET also includes spacer formations in a manner that the spacer formation on one side of the gate-stack is thinner than on the other side of the gate-stack.
公开/授权文献
- US08318568B2 Tunnel field effect transistor 公开/授权日：2012-11-27
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