A solid-state image sensing element (1) has a main face provided with an imaging region (1a) in which unit pixels containing photoelectric conversion elements are formed in matrix. Peripheral circuit elements (3, 4) are configured to control imaging operation of the solid-state image sensing element (1) or to perform signal processing of an image output of the solid-state image sensing element (1). The imaging region (1a) is covered with a transparent material (2). The peripheral circuit elements (3, 4) are mounted to a region of the main face of the solid-state image sensing element (1) except for the imaging region (1a) such that main faces of the peripheral circuit elements (3, 4) face the main face of the solid-state image sensing element (1).