发明申请
- 专利标题: NON-VOLATILE RESISTANCE-SWITCHING THIN FILM DEVICES
- 专利标题(中): 非易失性电阻切换薄膜器件
-
申请号: US13060514申请日: 2009-12-17
-
公开(公告)号: US20110266512A1公开(公告)日: 2011-11-03
- 发明人: I-Wei Chen , Soo Gil Kim , Albert Chen , Yudi Wang
- 申请人: I-Wei Chen , Soo Gil Kim , Albert Chen , Yudi Wang
- 申请人地址: US PA Philadelphia
- 专利权人: The Trustees of the University of Pennsylvania
- 当前专利权人: The Trustees of the University of Pennsylvania
- 当前专利权人地址: US PA Philadelphia
- 国际申请: PCT/US09/68518 WO 20091217
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01B1/02 ; H01L21/62
摘要:
Disclosed herein is a resistive switching device having an amorphous layer comprised of an insulating silicon-containing material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating silicon-containing material and a conducting material comprising between 5 and 40 percent by molar percentage of the composition is disclosed herein as well. Also disclosed herein are methods for switching the resistance of an amorphous material.
公开/授权文献
- US09236118B2 Non-volatile resistance-switching thin film devices 公开/授权日:2016-01-12