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16 条记录 (耗时 0.015 秒)

    Circuit and method for generating reference voltage, phase change random access memory apparatus and read method using the same
    3.
    发明授权
    Circuit and method for generating reference voltage, phase change random access memory apparatus and read method using the same 有权
    用于产生参考电压的电路和方法，相变随机存取存储装置和使用其的读取方法

    公开(公告)号：US08159869B2

    公开(公告)日：2012-04-17

    申请号：US12648437

    申请日：2009-12-29

    申请人： Hae Chan Park ,  Se Ho Lee ,  Soo Gil Kim

    发明人： Hae Chan Park ,  Se Ho Lee ,  Soo Gil Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C7/14 ,  G11C5/147 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2211/5634

    摘要： A circuit for generating a reference voltage includes at least one reference cell, a reference cell write driver, a reference cell sense amplifier, and a voltage compensation unit. The reference cell is a variable resistance memory cell. The reference cell write driver writes data to the reference cell. The reference cell sense amplifier reads out the data stored in the reference cell on the basis of a predetermined reference voltage. A voltage compensation unit outputs a compensation reference voltage by controlling the reference voltage in accordance with the output value of the sense amplifier.

    摘要翻译： 用于产生参考电压的电路包括至少一个参考单元，参考单元写入驱动器，参考单元读出放大器和电压补偿单元。 参考单元是可变电阻存储单元。 参考单元写入驱动程序将数据写入参考单元。 参考单元读出放大器基于预定的参考电压读出存储在参考单元中的数据。 电压补偿单元通过根据读出放大器的输出值控制参考电压来输出补偿基准电压。

    NON-VOLATILE RESISTANCE-SWITCHING THIN FILM DEVICES
    4.
    发明申请
    NON-VOLATILE RESISTANCE-SWITCHING THIN FILM DEVICES 有权
    非易失性电阻切换薄膜器件

    公开(公告)号：US20110266512A1

    公开(公告)日：2011-11-03

    申请号：US13060514

    申请日：2009-12-17

    申请人： I-Wei Chen ,  Soo Gil Kim ,  Albert Chen ,  Yudi Wang

    发明人： I-Wei Chen ,  Soo Gil Kim ,  Albert Chen ,  Yudi Wang

    IPC分类号： H01L45/00 ,  H01B1/02 ,  H01L21/62

    CPC分类号： G11C13/0002 ,  G11C13/0009 ,  G11C2213/33 ,  H01L45/10 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14

    摘要： Disclosed herein is a resistive switching device having an amorphous layer comprised of an insulating silicon-containing material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating silicon-containing material and a conducting material comprising between 5 and 40 percent by molar percentage of the composition is disclosed herein as well. Also disclosed herein are methods for switching the resistance of an amorphous material.

    摘要翻译： 本文公开了一种具有由绝缘含硅材料和导电材料构成的非晶层的电阻式开关器件。 非晶层可以设置在两个或更多个电极之间，并且能够在至少两个电阻状态之间切换。 还公开了包括电阻开关器件的电路和存储器件，并且还公开了包含绝缘含硅材料和包含组合物的5-40％摩尔百分数的导电材料的物质组合物。 本文还公开了用于切换无定形材料的电阻的方法。

    Non-volatile resistance-switching thin film devices
    5.
    发明授权
    Non-volatile resistance-switching thin film devices 有权
    非易失性电阻切换薄膜器件

    公开(公告)号：US09236118B2

    公开(公告)日：2016-01-12

    申请号：US13060514

    申请日：2009-12-17

    申请人： I-Wei Chen ,  Soo Gil Kim ,  Albert Chen ,  Yudi Wang

    发明人： I-Wei Chen ,  Soo Gil Kim ,  Albert Chen ,  Yudi Wang

    IPC分类号： H01L29/02 ,  H01L47/00 ,  G11C13/00 ,  H01L45/00

    CPC分类号： G11C13/0002 ,  G11C13/0009 ,  G11C2213/33 ,  H01L45/10 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14

    摘要： Disclosed herein is a resistive switching device having an amorphous layer comprised of an insulating silicon-containing material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating silicon-containing material and a conducting material comprising between 5 and 40 percent by molar percentage of the composition is disclosed herein as well. Also disclosed herein are methods for switching the resistance of an amorphous material.

    摘要翻译： 本文公开了一种具有由绝缘含硅材料和导电材料构成的非晶层的电阻式开关器件。 非晶层可以设置在两个或更多个电极之间，并且能够在至少两个电阻状态之间切换。 还公开了包括电阻开关器件的电路和存储器件，并且还公开了包含绝缘含硅材料和包含组合物的5-40％摩尔百分数的导电材料的物质组合物。 本文还公开了用于切换无定形材料的电阻的方法。

    SEMICONDUCTOR INTEGRATED CIRCUIT SYSTEM AND METHOD FOR DRIVING THE SAME
    6.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT SYSTEM AND METHOD FOR DRIVING THE SAME 有权
    半导体集成电路系统及其驱动方法

    公开(公告)号：US20130077392A1

    公开(公告)日：2013-03-28

    申请号：US13326907

    申请日：2011-12-15

    申请人： Hae Chan PARK ,  Soo Gil Kim

    发明人： Hae Chan PARK ,  Soo Gil Kim

    IPC分类号： G11C11/21

    CPC分类号： G11C13/0069 ,  G11C11/00 ,  G11C13/0004 ,  G11C13/0033 ,  G11C2013/0092 ,  Y10S977/754

    摘要： A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.

    摘要翻译： 一种半导体集成电路系统包括：相变线，包括构成第一存储单元的第一相变区和构成第二存储单元的第二相变区;写入电流提供单元，被配置为对 第一相变区和第二相变区，以及相变补偿单元，被配置为通过补偿由于相位而在另一个相变区域中引起的虚拟相位变化来恢复第一和第二相变区域中的另一个 - 所选择的相变区域的更换。

    Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator
    7.
    发明授权
    Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator 有权
    基于钙钛矿导体掺杂钙钛矿绝缘体的半导体组成的电阻切换存储器

    公开(公告)号：US08106375B2

    公开(公告)日：2012-01-31

    申请号：US11291945

    申请日：2005-11-30

    申请人： I-Wei Chen ,  Yudi Wang ,  Soo Gil Kim

    发明人： I-Wei Chen ,  Yudi Wang ,  Soo Gil Kim

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L29/0895 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

    摘要： Resistance-switching oxide films, and devices therewith, are disclosed. Resistance-switching oxide films, according to certain preferred aspects of the present invention, include at least about 75 atomic percent of an insulator oxide matrix having a conducting material dopant in an amount up to about 25 atomic percent. The matrix and dopant are preferably in solid solution. The insulator oxide matrix may also preferably include about 6 to about 12 atomic percent of a conducting material dopant. According to certain aspects of the present invention, the insulator oxide matrix, the conducting material dopant, or both, may have a perovskite crystal structure. The insulator oxide matrix may preferably include at least one of LaAlO3 and CaZrO3. Preferred conducting material dopants include SrRuO3, CaRuO3, or combinations thereof.

    摘要翻译： 公开了电阻切换氧化物膜及其装置。 根据本发明的某些优选方面的电阻切换氧化物膜包括至少约75原子％的具有高达约25原子百分比的导电材料掺杂剂的绝缘体氧化物基质。 基质和掺杂剂优选为固溶体。 绝缘体氧化物基质还可优选包括约6至约12原子％的导电材料掺杂剂。 根据本发明的某些方面，绝缘体氧化物基质，导电材料掺杂剂或两者可以具有钙钛矿晶体结构。 绝缘体氧化物基质可以优选包括LaAlO 3和CaZrO 3中的至少一种。 优选的导电材料掺杂剂包括SrRuO 3，CaRuO 3或其组合。

    NONVOLATILE MEMORY SYSTEM AND PROGRAM METHOD THEREOF
    9.
    发明申请
    NONVOLATILE MEMORY SYSTEM AND PROGRAM METHOD THEREOF 审中-公开
    非易失性存储器系统及其程序方法

    公开(公告)号：US20130033919A1

    公开(公告)日：2013-02-07

    申请号：US13333575

    申请日：2011-12-21

    申请人： Soo Gil KIM

    发明人： Soo Gil KIM

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5628 ,  G11C16/10 ,  G11C16/349

    摘要： A nonvolatile memory system and a program method thereof are provided. The nonvolatile memory system includes a nonvolatile memory cell array, an input/output (I/O) control circuit configured to control a program or read operation for the nonvolatile memory cell array; and a controller configured to store an equation representing a resistance-current (R-I) curve for resistance states of memory cells included in the nonvolatile memory cell array, apply an initial program current calculated based on the equation, calculate the equation based in on a resistance of a memory cell subjected to the initial program current, predict a reprogram current based on the equation obtained from the calculation, and control the I/O control circuit.

    摘要翻译： 提供了非易失性存储器系统及其编程方法。 非易失性存储器系统包括非易失性存储单元阵列，被配置为控制非易失存储单元阵列的程序或读操作的输入/输出（I / O）控制电路; 以及控制器，被配置为存储表示用于包含在非易失性存储单元阵列中的存储单元的电阻状态的电阻 - 电流（RI）曲线的方程，应用基于该等式计算的初始程序电流，基于电阻计算该方程 存储单元受到初始编程电流的影响，根据从计算获得的等式预测重编程电流，并控制I / O控制电路。

    CIRCUIT AND METHOD FOR GENERATING REFERENCE VOLTAGE, PHASE CHANGE RANDOM ACCESS MEMORY APPARATUS AND READ METHOD USING THE SAME
    10.
    发明申请
    CIRCUIT AND METHOD FOR GENERATING REFERENCE VOLTAGE, PHASE CHANGE RANDOM ACCESS MEMORY APPARATUS AND READ METHOD USING THE SAME 有权
    用于产生参考电压，相位变化随机存取存储器装置的电路和方法及使用其的读取方法

    公开(公告)号：US20110075473A1

    公开(公告)日：2011-03-31

    申请号：US12648437

    申请日：2009-12-29

    申请人： Hae Chan PARK ,  Se Ho LEE ,  Soo Gil KIM

    发明人： Hae Chan PARK ,  Se Ho LEE ,  Soo Gil KIM

    IPC分类号： G11C11/00 ,  G11C7/02 ,  G11C5/14

    CPC分类号： G11C7/14 ,  G11C5/147 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2211/5634

    摘要： A circuit for generating a reference voltage includes at least one reference cell, a reference cell write driver, a reference cell sense amplifier, and a voltage compensation unit. The reference cell is a variable resistance memory cell. The reference cell write driver writes data to the reference cell. The reference cell sense amplifier reads out the data stored in the reference cell on the basis of a predetermined reference voltage. A voltage compensation unit outputs a compensation reference voltage by controlling the reference voltage in accordance with the output value of the sense amplifier.

    摘要翻译： 用于产生参考电压的电路包括至少一个参考单元，参考单元写入驱动器，参考单元读出放大器和电压补偿单元。 参考单元是可变电阻存储单元。 参考单元写入驱动程序将数据写入参考单元。 参考单元读出放大器基于预定的参考电压读出存储在参考单元中的数据。 电压补偿单元通过根据读出放大器的输出值控制参考电压来输出补偿基准电压。