发明申请
- 专利标题： Superconductor Memristor Devices
- 专利标题（中）： 超导体忆阻器
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申请号： US13142582申请日： 2009-01-26
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公开(公告)号： US20110266513A1公开(公告)日： 2011-11-03
- 发明人: R. Stanley Williams , Jianhua Yang , Duncan Stewart
- 申请人： R. Stanley Williams , Jianhua Yang , Duncan Stewart
- 国际申请： PCT/US09/00518 WO 20090126
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
公开/授权文献
- US08450711B2 Semiconductor memristor devices 公开/授权日：2013-05-28
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