发明申请
- 专利标题： SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
- 专利标题（中）： 硅碳化硅半导体器件及其生产碳化硅半导体器件的方法
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申请号： US13143218申请日： 2009-11-30
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公开(公告)号： US20110266558A1公开(公告)日： 2011-11-03
- 发明人: Kotaro Yano
- 申请人： Kotaro Yano
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： SHOWA DENKO K.K.
- 当前专利权人： SHOWA DENKO K.K.
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2009-006627 20090115
- 国际申请： PCT/JP2009/006469 WO 20091130
- 主分类号： H01L29/161
- IPC分类号： H01L29/161 ; H01L21/28
摘要：
There is provided a silicon carbide semiconductor device equipped with an ohmic electrode that exhibits both low contact resistance and favorable surface conditions, the silicon carbide semiconductor device including a p-type silicon carbide single crystal, and an ohmic electrode for the p-type silicon carbide single crystal, wherein the ohmic electrode includes an alloy layer containing at least titanium, aluminum and silicon, and ratios of titanium, aluminum, and silicon in the alloy layer are Al: 40 to 70% by mass, Ti: 20 to 50% by mass, and Si: 1 to 15% by mass.
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