- 专利标题: Apparatus for Method for Immersion Lithography
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申请号: US13176604申请日: 2011-07-05
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公开(公告)号: US20110267591A1公开(公告)日: 2011-11-03
- 发明人: Burn Jeng Lin
- 申请人: Burn Jeng Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G03B27/52
- IPC分类号: G03B27/52
摘要:
An apparatus for immersion lithography that includes an imaging lens which has a front surface, a fluid-containing wafer stage for supporting a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.
公开/授权文献
- US08693115B2 Apparatus for method for immersion lithography 公开/授权日:2014-04-08
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