发明申请
- 专利标题： Irradiation assisted nucleation of quantum confinements by atomic layer deposition
- 专利标题（中）： 通过原子层沉积来辐射辅助成核量子限制
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申请号： US13065582申请日： 2011-03-24
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公开(公告)号： US20110269298A1公开(公告)日： 2011-11-03
- 发明人: Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
- 申请人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
- 主分类号： H01L21/18
- IPC分类号： H01L21/18 ; B82Y40/00
摘要：
A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.