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1.发明授权Irradiation assisted nucleation of quantum confinements by atomic layer deposition 有权通过原子层沉积来辐射辅助成核量子限制公开(公告)号：US08551868B2
公开(公告)日：2013-10-08
申请号：US13065582
申请日：2011-03-24
申请人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
发明人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
IPC分类号： H01L21/36
CPC分类号： C23C16/482 , B82Y10/00 , B82Y20/00 , C23C16/48 , C23C16/483 , C23C16/486 , C23C16/487 , H01L21/02532 , H01L21/02568 , H01L21/02601 , H01L21/02603 , H01L21/0262 , H01L31/035209 , H01L31/035218 , H01L31/035227 , H01L31/035236 , H01L31/18 , Y10S977/762 , Y10S977/773 , Y10S977/774
摘要： A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
摘要翻译： 提供了一种制造量子限制的方法。 该方法包括使用沉积设备沉积衬底上的材料层，其中沉积包括在循环之前，循环期间和/或在沉积循环之后照射该层，以改变在该沉积中的量子限制的成核 材料层以控制量子限制的尺寸和/或形状。 量子限制可以包括量子阱，纳米线或量子点。 相对于沉积设备，照射可以就地或离位。 照射可以包括光子，电子或离子的照射。 沉积可以包括原子层沉积，化学气相沉积，MOCVD，分子束外延，蒸发，溅射或脉冲激光沉积。
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2.发明申请Irradiation assisted nucleation of quantum confinements by atomic layer deposition 有权通过原子层沉积来辐射辅助成核量子限制公开(公告)号：US20110269298A1
公开(公告)日：2011-11-03
申请号：US13065582
申请日：2011-03-24
申请人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
发明人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
CPC分类号： C23C16/482 , B82Y10/00 , B82Y20/00 , C23C16/48 , C23C16/483 , C23C16/486 , C23C16/487 , H01L21/02532 , H01L21/02568 , H01L21/02601 , H01L21/02603 , H01L21/0262 , H01L31/035209 , H01L31/035218 , H01L31/035227 , H01L31/035236 , H01L31/18 , Y10S977/762 , Y10S977/773 , Y10S977/774
摘要： A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
摘要翻译： 提供了一种制造量子限制的方法。 该方法包括使用沉积设备沉积衬底上的材料层，其中沉积包括在循环之前，循环期间和/或在沉积循环之后照射该层，以改变在该沉积中的量子限制的成核 材料层以控制量子限制的尺寸和/或形状。 量子限制可以包括量子阱，纳米线或量子点。 相对于沉积设备，照射可以就地或离位。 照射可以包括光子，电子或离子的照射。 沉积可以包括原子层沉积，化学气相沉积，MOCVD，分子束外延，蒸发，溅射或脉冲激光沉积。
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3.发明授权公开(公告)号：US08296859B2
公开(公告)日：2012-10-23
申请号：US12383467
申请日：2009-03-23
申请人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
发明人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
IPC分类号： G01N13/10
CPC分类号： C23C16/047 , G01Q30/02
摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。
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4.发明申请公开(公告)号：US20090241232A1
公开(公告)日：2009-09-24
申请号：US12383467
申请日：2009-03-23
申请人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
发明人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
CPC分类号： C23C16/047 , G01Q30/02
摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。
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公开(公告)号：US08496999B2
公开(公告)日：2013-07-30
申请号：US12383588
申请日：2009-03-24
申请人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
发明人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
IPC分类号： C23C16/02
CPC分类号： C23C16/047 , C23C16/45536 , C23C16/45544 , G01Q30/02 , G01Q80/00
摘要： Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.
摘要翻译： 通过包括以下步骤的方法提供区域选择性原子层沉积。 首先，提供基板。 其次，扫描探针显微镜（SPM）的尖端设置在基板的表面附近。 然后在尖端和表面之间建立电位，导致在尖端附近产生一个或多个局部电效应。 提供用于原子层沉积（ALD）的沉积反应物，并且由于局部增强的ALD反应速率，由局部电效应限定的图案沉积。
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公开(公告)号：US20090255580A1
公开(公告)日：2009-10-15
申请号：US12383584
申请日：2009-03-24
IPC分类号： H01L31/0216
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/0384
摘要： Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.
摘要翻译： 提供了带有量子点的高效光伏器件。 量子点具有许多可用于太阳能电池的理想特性，包括容易选择的带隙和费米能级。 特别地，量子点的尺寸和组成可以确定其带隙和费米能级。 通过在太阳能电池的有源层中精确沉积量子点，可以存在带隙梯度以有效的阳光吸收，激子解离和电荷传输。 不匹配费米等级也存在于相邻量子点之间，允许内置的电场形成并有助于电荷传输和预防激子重组。
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7.发明申请公开(公告)号：US20100240167A1
公开(公告)日：2010-09-23
申请号：US12661778
申请日：2010-03-23
IPC分类号： H01L31/18 , H01L31/0352
CPC分类号： C23C16/45525 , B82Y20/00 , C23C16/408 , H01L21/02521 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L21/02603 , H01L21/02628 , H01L31/032 , H01L31/0352 , H01L31/035236 , H01L31/0384 , H01L31/075 , Y02E10/548
摘要： The current invention provides a method of fabricating quantum confinement (QC) in a solar cell that includes using atomic layer deposition (ALD) for providing at least one QC structure embedded into an intrinsic region of a p-i-n diode in the solar cell, where optical and electrical properties of the confinement structure are adjusted according to at least one dimension of the confinement structure. The QC structures can include quantum wells, quantum wires, quantum tubes, and quantum dots.
摘要翻译： 本发明提供了一种在太阳能电池中制造量子限制（QC）的方法，其包括使用原子层沉积（ALD）来提供嵌入到太阳能电池中的pin二极管的本征区域中的至少一个QC结构，其中光学和 根据约束结构的至少一个维度来调整约束结构的电性能。 QC结构可以包括量子阱，量子线，量子管和量子点。
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8.发明授权Method for producing tapered metallic nanowire tips on atomic force microscope cantilevers 失效在原子力显微镜悬臂上生产锥形金属纳米线尖端的方法公开(公告)号：US08168251B2
公开(公告)日：2012-05-01
申请号：US12287721
申请日：2008-10-10
IPC分类号： B05D5/12
摘要： A method of making nanowire probes is provided. The method includes providing a template having a nanoporous structure, providing a probe tip that is disposed on top of the template, and growing nanowires on the probe tip, where the nanowires are grown from the probe tip along the nanopores, and the nanowires conform to the shape of the nanopores.
摘要翻译： 提供制造纳米线探针的方法。 该方法包括提供具有纳米多孔结构的模板，提供设置在模板顶部的探针尖端，以及在探针尖端上生长纳米线，其中纳米线沿着纳米孔从探针尖端生长，并且纳米线符合 纳米孔的形状。
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9.发明申请Method for producing tapered metallic nanowire tips on atomic force microscope cantilevers 失效在原子力显微镜悬臂上生产锥形金属纳米线尖端的方法公开(公告)号：US20100089866A1
公开(公告)日：2010-04-15
申请号：US12287721
申请日：2008-10-10
摘要： A method of making nanowire probes is provided. The method includes providing a template having a nanoporous structure, providing a probe tip that is disposed on top of the template, and growing nanowires on the probe tip, where the nanowires are grown from the probe tip along the nanopores, and the nanowires conform to the shape of the nanopores.
摘要翻译： 提供制造纳米线探针的方法。 该方法包括提供具有纳米多孔结构的模板，提供设置在模板顶部的探针尖端，以及在探针尖端上生长纳米线，其中纳米线沿着纳米孔从探针尖端生长，并且纳米线符合 纳米孔的形状。
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公开(公告)号：US08395042B2
公开(公告)日：2013-03-12
申请号：US12383584
申请日：2009-03-24
IPC分类号： H01L31/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/0384
摘要： Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.
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