发明申请
- 专利标题： SEMICONDUCTOR SUBSTRATE SURFACE TREATMENT METHOD
- 专利标题（中）： 半导体衬底表面处理方法
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申请号： US13069164申请日： 2011-03-22
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公开(公告)号： US20110269313A1公开(公告)日： 2011-11-03
- 发明人: Yoshihiro OGAWA , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
- 申请人： Yoshihiro OGAWA , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
- 优先权： JP2010-103943 20100428
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
公开/授权文献
- US08435903B2 Semiconductor substrate surface treatment method 公开/授权日：2013-05-07
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