公开(公告)号：US08771429B2

公开(公告)日：2014-07-08

申请号：US13420870

申请日：2012-03-15

申请人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B7/00

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US20140083979A1

公开(公告)日：2014-03-27

申请号：US14116952

申请日：2012-05-10

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： B05D3/14

CPC分类号： B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

摘要翻译： 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

公开(公告)号：US20130122706A1

公开(公告)日：2013-05-16

申请号：US13428681

申请日：2012-03-23

申请人： Hisashi OKUCHI ,  Hidekazu Hayashi ,  Kentaro Shimayama ,  Hiroshi Tomita

发明人： Hisashi OKUCHI ,  Hidekazu Hayashi ,  Kentaro Shimayama ,  Hiroshi Tomita

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834

摘要： According to one embodiment, a method of manufacturing of a semiconductor device is provided. In the method, a front surface of a semiconductor substrate and a front surface of a support substrate are bonded to each other by an adhesive. A part of a circumferential part of the support substrate is subjected to water-repellent treatment to thereby form a water-repellent area on the part of the circumferential part in such a manner that the water-repellent area and an end face of the adhesive are in contact with each other. The semiconductor substrate is removed from a rear surface side by wet etching.

摘要翻译： 根据一个实施例，提供了半导体器件的制造方法。 在该方法中，半导体衬底的前表面和支撑衬底的前表面通过粘合剂彼此粘结。 对支撑基板的圆周部分的一部分进行防水处理，从而在周向部分的一部分上形成防水区域，使得防水区域和粘合剂的端面为 彼此接触。 通过湿法蚀刻从背面侧去除半导体衬底。

公开(公告)号：US20130061492A1

公开(公告)日：2013-03-14

申请号：US13423374

申请日：2012-03-19

申请人： Hisashi OKUCHI ,  Hidekazu HAYASHI ,  Linan JI ,  Yohei SATO ,  Hiroshi TOMITA

发明人： Hisashi OKUCHI ,  Hidekazu HAYASHI ,  Linan JI ,  Yohei SATO ,  Hiroshi TOMITA

IPC分类号： F26B5/04

CPC分类号： F26B7/00 ,  F26B5/04

摘要： According to one embodiment, a supercritical drying apparatus comprises a chamber being hermetically sealable and configured to store a semiconductor substrate, a heater configured to heat an inner side of the chamber, a supply unit configured to supply carbon dioxide to the chamber, a discharge unit configured to discharge carbon dioxide from the chamber, and a rotation unit configured to rotate the chamber by an angle equal to or greater than 90 degrees and equal to or smaller than 180 degrees with respect to the horizontal direction.

摘要翻译： 根据一个实施例，超临界干燥装置包括：气室密封并构造成存储半导体衬底;加热器，其构造成加热室的内侧;供应单元，被配置为向室供应二氧化碳;排放单元 被构造成从所述室排放二氧化碳，以及旋转单元，其被构造成使所述室相对于水平方向旋转等于或大于90度且等于或小于180度的角度。

公开(公告)号：US07985683B2

公开(公告)日：2011-07-26

申请号：US12801178

申请日：2010-05-26

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/312

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US20110143541A1

公开(公告)日：2011-06-16

申请号：US12886427

申请日：2010-09-20

申请人： Yoshihiro OGAWA ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

发明人： Yoshihiro OGAWA ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC分类号： H01L21/308 ,  B08B3/08 ,  B08B3/02

CPC分类号： H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

摘要翻译： 在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。 基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。 第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。 第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。 第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。 为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。 去除单元除去留下凸起图案的防水保护膜。

公开(公告)号：US20100075504A1

公开(公告)日：2010-03-25

申请号：US12574543

申请日：2009-10-06

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US20080305564A1

公开(公告)日：2008-12-11

申请号：US12133023

申请日：2008-06-04

申请人： Hisashi Okuchi

发明人： Hisashi Okuchi

IPC分类号： H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20 ,  Y10T29/41

摘要： A manufacturing apparatus for a semiconductor device, treating a SiN film formed on a wafer with phosphoric acid solution, including a processing bath to store phosphoric acid solution provided for treatment of the wafer, a control unit for calculating integrated SiN etching amount of the phosphoric acid solation, determining necessity of quality adjustment of the phosphoric acid solution, based on correlation between the integrated SiN etching amount calculated and etching selectivity to oxide film, and calculating a quality adjustment amount of the phosphoric acid solution as needed, and also including a mechanism to adjust the quality of the phosphoric acid solution based on the quality adjustment amount calculated.

摘要翻译： 一种用于半导体器件的制造装置，用磷酸溶液处理形成在晶片上的SiN膜，包括处理槽以存储用于处理晶片的磷酸溶液;控制单元，用于计算磷酸的一体化SiN蚀刻量 基于计算的一体SiN蚀刻量和对氧化膜的蚀刻选择性之间的相关性，根据需要计算磷酸溶液的质量调整量，确定磷酸溶液的质量调整的必要性，还包括： 根据计算出的质量调整量调整磷酸溶液的质量。

公开(公告)号：US07097784B2

公开(公告)日：2006-08-29

申请号：US10742992

申请日：2003-12-23

申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

摘要翻译： 一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为 在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

公开(公告)号：US09177781B2

公开(公告)日：2015-11-03

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/02

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。