发明申请
- 专利标题: CHARGED PARTICLE BEAM APPLIED APPARATUS
- 专利标题(中): 充电颗粒应用装置
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申请号: US13143404申请日: 2010-01-04
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公开(公告)号: US20110272576A1公开(公告)日: 2011-11-10
- 发明人: Hiroki Otaki , Momoyo Enyama , Hiroya Ohta
- 申请人: Hiroki Otaki , Momoyo Enyama , Hiroya Ohta
- 申请人地址: JP Tokyo
- 专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-006302 20090115
- 国际申请: PCT/JP2010/000003 WO 20100104
- 主分类号: G01N23/00
- IPC分类号: G01N23/00
摘要:
Provided is a multi-beam type charged particle beam applied apparatus in an implementable configuration, capable of achieving both high detection accuracy of secondary charged particles and high speed of processing characteristically different specimens. An aperture array (111) includes plural aperture patterns. A deflector (109) for selecting an aperture pattern through which a primary beam passes is disposed at the position of a charged particle source image created between an electron gun (102), i.e., a charged particle source, and the aperture array (111). At the time of charge-control beam illumination and at the time of signal-detection beam illumination, an aperture pattern of the aperture array (111) is selected, and conditions of a lens array (112), surface electric-field control electrode (118) and the like are switched in synchronization with each beam scanning. Thus, the charges are controlled and the signals are detected at different timings under suitable conditions, respectively.
公开/授权文献
- US08350214B2 Charged particle beam applied apparatus 公开/授权日:2013-01-08