发明申请
- 专利标题： NITRIDE SEMICONDUCTOR DEVICE
- 专利标题（中）： 氮化物半导体器件
-
申请号： US13052881申请日： 2011-03-21
-
公开(公告)号： US20110272708A1公开(公告)日： 2011-11-10
- 发明人: Akira Yoshioka , Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno
- 申请人： Akira Yoshioka , Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-106399 20100506
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L29/22
摘要：
According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.
公开/授权文献
- US08664696B2 Nitride semiconductor device 公开/授权日：2014-03-04
信息查询
IPC分类:
