发明申请
- 专利标题： MEMORIES AND THEIR FORMATION
- 专利标题（中）： 记忆及其形成
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申请号： US12776965申请日： 2010-05-10
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公开(公告)号： US20110272754A1公开(公告)日： 2011-11-10
- 发明人: Sanh D. Tang , John Zahurak , Siddartha Kondoju , Haitao Liu , Nishant Sinha
- 申请人： Sanh D. Tang , John Zahurak , Siddartha Kondoju , Haitao Liu , Nishant Sinha
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/336 ; H01L21/8229 ; H01L21/76
摘要：
Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.
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