发明申请
US20110272787A1 FORMATION OF SELENIDE, SULFIDE OR MIXED SELENIDE-SULFIDE FILMS ON METAL OR METAL COATED SUBSTRATES 审中-公开
在金属或金属涂层基体上形成硒化物,硫化物或混合的硫化铟锡膜

  • 专利标题: FORMATION OF SELENIDE, SULFIDE OR MIXED SELENIDE-SULFIDE FILMS ON METAL OR METAL COATED SUBSTRATES
  • 专利标题(中): 在金属或金属涂层基体上形成硒化物,硫化物或混合的硫化铟锡膜
  • 申请号: US13105045
    申请日: 2011-05-11
  • 公开(公告)号: US20110272787A1
    公开(公告)日: 2011-11-10
  • 发明人: Erten EserShannon Fields
  • 申请人: Erten EserShannon Fields
  • 申请人地址: US DE Newark
  • 专利权人: University of Delaware
  • 当前专利权人: University of Delaware
  • 当前专利权人地址: US DE Newark
  • 主分类号: H01L29/24
  • IPC分类号: H01L29/24
FORMATION OF SELENIDE, SULFIDE OR MIXED SELENIDE-SULFIDE FILMS ON METAL OR METAL COATED SUBSTRATES
摘要:
A composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenidesulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.
信息查询
0/0