发明申请
- 专利标题: Nanochannel Device and Method for Manufacturing Thereof
- 专利标题(中): 纳米通道器件及其制造方法
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申请号: US13100537申请日: 2011-05-04
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公开(公告)号: US20110272789A1公开(公告)日: 2011-11-10
- 发明人: Gang Wang , Joshua Tseng , Roger Loo
- 申请人: Gang Wang , Joshua Tseng , Roger Loo
- 申请人地址: BE Leuven BE Leuven TW HsinChu
- 专利权人: IMEC,KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D,TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: IMEC,KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D,TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: BE Leuven BE Leuven TW HsinChu
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L21/20 ; B82Y99/00 ; B82Y40/00
摘要:
The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device.
公开/授权文献
- US08384195B2 Nanochannel device and method for manufacturing thereof 公开/授权日:2013-02-26
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