发明申请
US20110273926A1 Method and Apparatus of Probabilistic Programming Multi-Level Memory in Cluster States Of Bi-Stable Elements 失效
概率编程方法与设备多级存储器在双稳态元件的集群状态

Method and Apparatus of Probabilistic Programming Multi-Level Memory in Cluster States Of Bi-Stable Elements
摘要:
A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.
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