发明申请
US20110273952A1 SEMICONDUCTOR MEMORY DEVICE THAT CAN STABLY PERFORM WRITING AND READING WITHOUT INCREASING CURRENT CONSUMPTION EVEN WITH A LOW POWER SUPPLY VOLTAGE
有权
半导体存储器件，即使在低功耗电压下也能稳定地执行写入和读取，而不会增加电流消耗
- 专利标题： SEMICONDUCTOR MEMORY DEVICE THAT CAN STABLY PERFORM WRITING AND READING WITHOUT INCREASING CURRENT CONSUMPTION EVEN WITH A LOW POWER SUPPLY VOLTAGE
- 专利标题（中）： 半导体存储器件，即使在低功耗电压下也能稳定地执行写入和读取，而不会增加电流消耗
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申请号： US13186769申请日： 2011-07-20
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公开(公告)号： US20110273952A1公开(公告)日： 2011-11-10
- 发明人: Koji NII , Shigeki Obayashi , Hiroshi Makino , Koichiro Ishibashi , Hirofumi Shinohara
- 申请人： Koji NII , Shigeki Obayashi , Hiroshi Makino , Koichiro Ishibashi , Hirofumi Shinohara
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 优先权： JP2005-149265(P) 20050523; JP2006-107643(P) 20060410
- 主分类号： G11C5/14
- IPC分类号： G11C5/14
摘要：
Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.
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