发明申请
- 专利标题: NEGATIVE PHOTORESIST COMPOSITION AND PATTERNING METHOD FOR DEVICE
- 专利标题(中): 负极光电组合物和装置的方法
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申请号: US13100773申请日: 2011-05-04
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公开(公告)号: US20110274853A1公开(公告)日: 2011-11-10
- 发明人: Chan-Hyo PARK , Kyung-Jun KIM , Yu-Na KIM
- 申请人: Chan-Hyo PARK , Kyung-Jun KIM , Yu-Na KIM
- 申请人地址: KR Seoul
- 专利权人: LG CHEM, LTD.
- 当前专利权人: LG CHEM, LTD.
- 当前专利权人地址: KR Seoul
- 优先权: KR10-2010-0042057 20100504
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; B05D5/12 ; G03F7/20
摘要:
The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.