发明申请
- 专利标题： GENERATION OF MUTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS
- 专利标题（中）： 多重直径纳米效应晶体管的产生
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申请号： US12778517申请日： 2010-05-12
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公开(公告)号： US20110278543A1公开(公告)日： 2011-11-17
- 发明人: Sarunya Bangsaruntip , Guy M. Cohen , Amlan Majumdar , Jeffrey W. Sleight
- 申请人： Sarunya Bangsaruntip , Guy M. Cohen , Amlan Majumdar , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L21/336
摘要：
A method of modifying a wafer having semiconductor disposed on an insulator is provided and includes establishing first and second regions of the wafer with different initial semiconductor thicknesses, forming pairs of semiconductor pads connected via respective nanowire channels at each of the first and second regions and reshaping the nanowire channels into nanowires each having a respective differing thickness reflective of the different initial semiconductor thicknesses at each of the first and second regions.