发明申请
US20110278585A1 GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
审中-公开
减少偏差密度非极性氮化钠的生长
- 专利标题： GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- 专利标题（中）： 减少偏差密度非极性氮化钠的生长
-
申请号： US12947453申请日： 2010-11-16
-
公开(公告)号： US20110278585A1公开(公告)日： 2011-11-17
- 发明人: Benjamin A. Haskell , Michael D. Craven , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Benjamin A. Haskell , Michael D. Craven , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： JP Kawaguchi City US CA Oakland
- 专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY,THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY,THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： JP Kawaguchi City US CA Oakland
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/20
摘要：
Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
信息查询
IPC分类:
