A CVD apparatus is provided, that can remarkably improve the quality and productivity of susceptors without causing increase in production cost or increase in size of the apparatus. A CVD apparatus is provided, for forming a SiC film on a surface of a carbonaceous substrate (5) by introducing a gas into the apparatus while the carbonaceous substrate (5) is being supported by a support member. The support member has a lower portion support member (6) on which the carbonaceous substrate (5) is to be placed, the lower portion support member supporting a lower portion of the carbonaceous substrate (5), and an upper portion support member (13) supporting an upper portion of the carbonaceous substrate (5). The upper portion support member (13) is provided at an outer peripheral edge of the carbonaceous substrate (5). The upper portion support member (13) has a V-shaped groove (13d). The carbonaceous substrate (5) is disposed with sufficient clearance in a carbonaceous substrate-accommodating space (17) formed by the V-shaped groove (13d).