发明申请
- 专利标题： MEMORY SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME
- 专利标题（中）： 存储器半导体器件及其操作方法
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申请号： US13107206申请日： 2011-05-13
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公开(公告)号： US20110286266A1公开(公告)日： 2011-11-24
- 发明人: BYUNGKYU CHO , Changyun Lee , Sunghoi Hur
- 申请人： BYUNGKYU CHO , Changyun Lee , Sunghoi Hur
- 优先权： KR10-2010-0048194 20100524
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution.
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