Invention Application
- Patent Title: Compound Semiconductor Device and Method for Fabricating the Same
- Patent Title (中): 复合半导体器件及其制造方法
-
Application No.: US12967289Application Date: 2010-12-14
-
Publication No.: US20110291226A1Publication Date: 2011-12-01
- Inventor: Kuo-Jui Peng , Chuan-Jane Chao , Tsyr-Shyang Liou
- Applicant: Kuo-Jui Peng , Chuan-Jane Chao , Tsyr-Shyang Liou
- Applicant Address: TW Taipei
- Assignee: RICHWAVE TECHNOLOGY CORP.
- Current Assignee: RICHWAVE TECHNOLOGY CORP.
- Current Assignee Address: TW Taipei
- Priority: TW99116630 20100525
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02
Abstract:
A compound semiconductor device is provided, including a gallium arsenide (GaAs) substrate having a first protrusion portion and a second protrusion portion, wherein the first protrusion portion is formed over a first portion of the GaAs substrate and the second protrusion is formed over a second portion of the GaAs substrate. A first element is disposed over the first protrusion portion, and a second element is disposed over the second protrusion portion.
Public/Granted literature
- US08580627B2 Compound semiconductor device and method for fabricating the same Public/Granted day:2013-11-12
Information query
IPC分类:
