公开(公告)号：US08580627B2

公开(公告)日：2013-11-12

申请号：US12967289

申请日：2010-12-14

Applicant: Kuo-Jui Peng ,  Chuan-Jane Chao ,  Tsyr-Shyang Liou

Inventor： Kuo-Jui Peng ,  Chuan-Jane Chao ,  Tsyr-Shyang Liou

IPC: H01L21/338 ,  H01L21/28 ,  H01L21/3205

CPC classification number: H01L29/92 ,  H01L27/0605 ,  H01L29/20 ,  H01L29/8605

Abstract: A compound semiconductor device is provided, including a gallium arsenide (GaAs) substrate having a first protrusion portion and a second protrusion portion, wherein the first protrusion portion is formed over a first portion of the GaAs substrate and the second protrusion is formed over a second portion of the GaAs substrate. A first element is disposed over the first protrusion portion, and a second element is disposed over the second protrusion portion.

Abstract translation: 提供了一种化合物半导体器件，其包括具有第一突出部分和第二突出部分的砷化镓（GaAs）衬底，其中第一突出部分形成在GaAs衬底的第一部分上，并且第二突起形成在第二突起部分上 部分GaAs衬底。 第一元件设置在第一突出部分上方，第二元件设置在第二突起部分上。

公开(公告)号：US20110291226A1

公开(公告)日：2011-12-01

申请号：US12967289

申请日：2010-12-14

Applicant: Kuo-Jui Peng ,  Chuan-Jane Chao ,  Tsyr-Shyang Liou

Inventor： Kuo-Jui Peng ,  Chuan-Jane Chao ,  Tsyr-Shyang Liou

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/92 ,  H01L27/0605 ,  H01L29/20 ,  H01L29/8605

Abstract: A compound semiconductor device is provided, including a gallium arsenide (GaAs) substrate having a first protrusion portion and a second protrusion portion, wherein the first protrusion portion is formed over a first portion of the GaAs substrate and the second protrusion is formed over a second portion of the GaAs substrate. A first element is disposed over the first protrusion portion, and a second element is disposed over the second protrusion portion.

Abstract translation: 提供了一种化合物半导体器件，其包括具有第一突出部分和第二突出部分的砷化镓（GaAs）衬底，其中第一突出部分形成在GaAs衬底的第一部分上，并且第二突起形成在第二突起部分上 部分GaAs衬底。 第一元件设置在第一突出部分上方，第二元件设置在第二突起部分上。