发明申请
- 专利标题: CHIP BUMP STRUCTURE AND METHOD FOR FORMING THE SAME
- 专利标题(中): 芯片BUMP结构及其形成方法
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申请号: US13104597申请日: 2011-05-10
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公开(公告)号: US20110291273A1公开(公告)日: 2011-12-01
- 发明人: CHENG TANG HUANG
- 申请人: CHENG TANG HUANG
- 申请人地址: TW HSINCHU
- 专利权人: CHIPMOS TECHNOLOGIES INC.
- 当前专利权人: CHIPMOS TECHNOLOGIES INC.
- 当前专利权人地址: TW HSINCHU
- 优先权: TW099116772 20100526
- 主分类号: H01L23/488
- IPC分类号: H01L23/488 ; H01L21/283
摘要:
A chip bump structure is formed on a substrate. The substrate includes at least one contact pad and a dielectric layer. The dielectric layer has at least one opening. The at least one opening exposes the at least one contact pad. The chip bump structure includes at least one elastic bump, at least one first metal layer, at least one second metal layer, and at least one solder ball. The at least one elastic bump covers a central portion of the at least one contact pad. The at least one first metal layer covers the at least one elastic bump. The at least one first metal layer has a portion of the at least one contact pad. The portion of the at least one contact pad is not overlaid by the at least one elastic bump. The at least one second metal layer is formed on a portion of the at least one first metal layer. The portion of the at least one first metal layer is located on the top of the at least one elastic bump. The at least one solder ball is formed on the at least one second metal layer. The at least one solder ball is also on the top of the at least one elastic bump.
公开/授权文献
- US08274150B2 Chip bump structure and method for forming the same 公开/授权日:2012-09-25
信息查询
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