发明申请
US20110292713A1 Reading a Memory Element Within a Crossbar Array 有权
读取交叉开关阵列中的内存元素

Reading a Memory Element Within a Crossbar Array
摘要:
A method for reading a memory element within a crossbar array includes switching a column line connected to a target memory element of the crossbar array to connected to an input of a current mirror; applying an error voltage to unselected rows of the crossbar array; applying a sense voltage to a row line connected to the target memory element; and measuring an output current of the current mirror.
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