发明申请
- 专利标题： THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD
- 专利标题（中）： 薄膜成型装置和薄膜成型方法
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申请号： US13147878申请日： 2010-01-28
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公开(公告)号： US20110293853A1公开(公告)日： 2011-12-01
- 发明人: Kazuki Takizawa , Yasunari Mori , Kazutoshi Murata
- 申请人： Kazuki Takizawa , Yasunari Mori , Kazutoshi Murata
- 申请人地址： JP Chuo-ku, Tokyo
- 专利权人： MITSUI ENGINEERING & SHIPBUILDING CO., LTD
- 当前专利权人： MITSUI ENGINEERING & SHIPBUILDING CO., LTD
- 当前专利权人地址： JP Chuo-ku, Tokyo
- 优先权： JP2009-032041 20090213
- 国际申请： PCT/JP2010/000483 WO 20100128
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; C23C16/52 ; C23C16/455
摘要：
A thin film forming apparatus controls pressures of a first internal space in a deposition vessel and a second internal space provided in the first internal space according to determined pressure conditions, respectively. The apparatus causes a source gas to flow onto a substrate in the second internal space and supplies a high-frequency power to a plasma source provided in the first internal space according to the pressure conditions, thereby generating plasma in the second internal space to form a thin film on the substrate.
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