发明申请
US20110298446A1 CURRENT SENSOR, INVERTER CIRCUIT, AND SEMICONDUCTOR DEVICE HAVING THE SAME
有权
电流传感器,逆变器电路和具有该电流传感器的半导体器件
- 专利标题: CURRENT SENSOR, INVERTER CIRCUIT, AND SEMICONDUCTOR DEVICE HAVING THE SAME
- 专利标题(中): 电流传感器,逆变器电路和具有该电流传感器的半导体器件
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申请号: US13150764申请日: 2011-06-01
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公开(公告)号: US20110298446A1公开(公告)日: 2011-12-08
- 发明人: Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
- 申请人: Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
- 申请人地址: JP Kariya-city
- 专利权人: DENSO CORPORATION
- 当前专利权人: DENSO CORPORATION
- 当前专利权人地址: JP Kariya-city
- 优先权: JP2010-129319 20100604; JP2011-15345 20110127; JP2011-27411 20110210
- 主分类号: G01R1/20
- IPC分类号: G01R1/20 ; H01L29/739
摘要:
A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.