公开(公告)号：US08854033B2

公开(公告)日：2014-10-07

申请号：US13150764

申请日：2011-06-01

申请人： Satoshi Shiraki ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

发明人： Satoshi Shiraki ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

IPC分类号： G01R1/20

CPC分类号： H01L27/1203 ,  G01R19/0092 ,  H01L21/76283 ,  H01L23/585 ,  H01L29/0696 ,  H01L29/405 ,  H01L29/7394 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

摘要翻译： 具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛 第一个岛屿。 横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。 主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。 通过检测流过感测单元的第二电流来检测第一电流。

公开(公告)号：US20110298446A1

公开(公告)日：2011-12-08

申请号：US13150764

申请日：2011-06-01

申请人： Satoshi SHIRAKI ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

发明人： Satoshi SHIRAKI ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

IPC分类号： G01R1/20 ,  H01L29/739

CPC分类号： H01L27/1203 ,  G01R19/0092 ,  H01L21/76283 ,  H01L23/585 ,  H01L29/0696 ,  H01L29/405 ,  H01L29/7394 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

摘要翻译： 具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛 第一个岛屿。 横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。 主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。 通过检测流过感测单元的第二电流来检测第一电流。

公开(公告)号：US08791690B2

公开(公告)日：2014-07-29

申请号：US13150764

申请日：2011-06-01

申请人： Satoshi Shiraki ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

发明人： Satoshi Shiraki ,  Norihito Tokura ,  Shigeki Takahashi ,  Masahiro Yamamoto ,  Akira Yamada ,  Hiroyasu Kudo ,  Youichi Ashida ,  Akio Nakagawa

IPC分类号： G01R1/20

摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

公开(公告)号：US09240445B2

公开(公告)日：2016-01-19

申请号：US14113419

申请日：2012-05-10

申请人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

发明人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

IPC分类号： H01L23/62 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861

CPC分类号： H01L29/063 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/861

摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.

摘要翻译： 横向半导体器件包括半导体层，绝缘层和电阻场板。 半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。 绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。 电阻场板形成在绝缘层的表面上。 在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。 电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

公开(公告)号：US20140048911A1

公开(公告)日：2014-02-20

申请号：US14113419

申请日：2012-05-10

申请人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

发明人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

IPC分类号： H01L29/06

CPC分类号： H01L29/063 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/861

摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.

摘要翻译： 横向半导体器件包括半导体层，绝缘层和电阻场板。 半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。 绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。 电阻场板形成在绝缘层的表面上。 在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。 电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

公开(公告)号：US20110073904A1

公开(公告)日：2011-03-31

申请号：US12923469

申请日：2010-09-23

申请人： Youichi Ashida ,  Norihito Tokura ,  Shigeki Takahashi ,  Yoshiaki Nakayama ,  Satoshi Shiraki ,  Kouji Senda

发明人： Youichi Ashida ,  Norihito Tokura ,  Shigeki Takahashi ,  Yoshiaki Nakayama ,  Satoshi Shiraki ,  Kouji Senda

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/78 ,  H01L21/762

CPC分类号： H01L27/1203 ,  H01L21/76264 ,  H01L21/84 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66128 ,  H01L29/7394 ,  H01L29/7824 ,  H01L29/8611

摘要： A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.

摘要翻译： 半导体器件包括：SOI衬底; 半导体元件，其具有设置在所述SOI衬底的有源层中的第一和第二杂质层，所述第二杂质层围绕所述第一杂质层; 以及设置在与SOI衬底的嵌入式绝缘膜相邻的有源层的一部分中的多个第一和第二导电类型区域。 交替地布置第一和第二导电类型区域。 第一和第二导电类型区域具有对应于半导体元件的布局。

公开(公告)号：US08604513B2

公开(公告)日：2013-12-10

申请号：US12923469

申请日：2010-09-23

申请人： Youichi Ashida ,  Norihito Tokura ,  Shigeki Takahashi ,  Yoshiaki Nakayama ,  Satoshi Shiraki ,  Kouji Senda

发明人： Youichi Ashida ,  Norihito Tokura ,  Shigeki Takahashi ,  Yoshiaki Nakayama ,  Satoshi Shiraki ,  Kouji Senda

IPC分类号： H01L29/66

CPC分类号： H01L27/1203 ,  H01L21/76264 ,  H01L21/84 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66128 ,  H01L29/7394 ,  H01L29/7824 ,  H01L29/8611

摘要： A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.

摘要翻译： 半导体器件包括：SOI衬底; 半导体元件，其具有设置在所述SOI衬底的有源层中的第一和第二杂质层，所述第二杂质层围绕所述第一杂质层; 以及设置在与SOI衬底的嵌入式绝缘膜相邻的有源层的一部分中的多个第一和第二导电类型区域。 交替地布置第一和第二导电类型区域。 第一和第二导电类型区域具有对应于半导体元件的布局。

公开(公告)号：US08354691B2

公开(公告)日：2013-01-15

申请号：US13226636

申请日：2011-09-07

申请人： Norihito Tokura ,  Shigeki Takahashi ,  Youichi Ashida ,  Akio Nakagawa

发明人： Norihito Tokura ,  Shigeki Takahashi ,  Youichi Ashida ,  Akio Nakagawa

IPC分类号： H01L29/739

CPC分类号： H01L29/7394 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/43 ,  H01L29/7397

摘要： A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.

摘要翻译： N沟道横向绝缘栅双极晶体管包括半导体衬底，漂移层，集电极区，沟道层，发射极区，栅极绝缘膜，栅电极，集电极，发射极。 集电极区域包括具有高杂质浓度的高杂质浓度区域和杂质浓度低于高杂质浓度区域的低杂质浓度区域。 集电极与高杂质浓度区域欧姆接触，与低杂质浓度区域进行肖特基接触。

公开(公告)号：US20120061726A1

公开(公告)日：2012-03-15

申请号：US13226636

申请日：2011-09-07

申请人： Norihito TOKURA ,  Shigeki Takahashi ,  Youichi Ashida ,  Akio Nakagawa

发明人： Norihito TOKURA ,  Shigeki Takahashi ,  Youichi Ashida ,  Akio Nakagawa

IPC分类号： H01L29/739

CPC分类号： H01L29/7394 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/43 ,  H01L29/7397

摘要： A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.

摘要翻译： N沟道横向绝缘栅双极晶体管包括半导体衬底，漂移层，集电极区，沟道层，发射极区，栅极绝缘膜，栅电极，集电极，发射极。 集电极区域包括具有高杂质浓度的高杂质浓度区域和杂质浓度低于高杂质浓度区域的低杂质浓度区域。 集电极与高杂质浓度区域欧姆接触，与低杂质浓度区域进行肖特基接触。

公开(公告)号：US09136362B2

公开(公告)日：2015-09-15

申请号：US13615912

申请日：2012-09-14

申请人： Takeshi Sakai ,  Akira Yamada ,  Shigeki Takahashi ,  Youichi Ashida ,  Satoshi Shiraki

发明人： Takeshi Sakai ,  Akira Yamada ,  Shigeki Takahashi ,  Youichi Ashida ,  Satoshi Shiraki

IPC分类号： H01L29/02 ,  H01L29/739 ,  H01L21/765 ,  H01L29/40 ,  H01L29/417 ,  H01L29/861 ,  H01L29/868 ,  H01L29/06 ,  H01L29/08

CPC分类号： H01L29/7394 ,  H01L21/765 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/405 ,  H01L29/41725 ,  H01L29/8611 ,  H01L29/868

摘要： A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm−3.

摘要翻译： 具有横向元件的半导体器件包括半导体衬底，衬底上的第一和第二电极以及从第一电极延伸到第二电极的电阻场板。 横向元件在第一和第二电极之间通过电流。 施加到第二电极的电压小于施加到第一电极的电压。 电阻场板具有与第一端部相对的第一端部和第二端部。 第二端部比第一端部更靠近第二电极。 第二端部的杂质浓度为1×1018cm-3以上。