发明申请
- 专利标题: Thin-Film Piezoelectric Resonator and Thin-Film Piezoelectric Filter Using the Same
- 专利标题(中): 薄膜压电谐振器和使用其的薄膜压电滤波器
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申请号: US13202442申请日: 2010-02-17
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公开(公告)号: US20110298564A1公开(公告)日: 2011-12-08
- 发明人: Kazuki Iwashita , Hiroshi Tsuchiya , Kensuke Tanaka , Takuya Maruyama
- 申请人: Kazuki Iwashita , Hiroshi Tsuchiya , Kensuke Tanaka , Takuya Maruyama
- 优先权: JP2009-037853 20090220; JP2009-085613 20090331
- 国际申请: PCT/JP2010/052336 WO 20100217
- 主分类号: H03H9/17
- IPC分类号: H03H9/17 ; H01L41/047 ; H01L41/18 ; H01L41/04
摘要:
A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f1
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