公开(公告)号：US08854156B2

公开(公告)日：2014-10-07

申请号：US13202442

申请日：2010-02-17

申请人： Kazuki Iwashita ,  Hiroshi Tsuchiya ,  Kensuke Tanaka ,  Takuya Maruyama

发明人： Kazuki Iwashita ,  Hiroshi Tsuchiya ,  Kensuke Tanaka ,  Takuya Maruyama

IPC分类号： H03H9/15 ,  H03H9/54 ,  H03H9/17 ,  H03H9/02 ,  H03H9/60 ,  H03H3/02

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02133 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/605

摘要： A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f1

摘要翻译： 1.一种薄膜压电谐振器，包括基板（6）; 压电层（2），具有顶部电极（10）和底部电极（8）的压电谐振器叠层（12）和空腔（4）。 压电谐振器叠层（12）具有顶部电极和底部电极在厚度方向上重叠的振动区域（40），振动区域包括第一振动区域，第二振动区域和第三振动区域。 当从厚度方向观察时，第一振动区域存在于最外侧，第三振动区域存在于最内侧并且不与第一振动区域接触，并且第二振动区域介于第一振动区域和第二振动区域之间， 第三振动区域。 振动区域（40）的初始厚度 - 纵向振动的共振频率在第一振动区域为f1，在第三振动区域为f2，其中f1和f2满足f1

公开(公告)号：US20100109809A1

公开(公告)日：2010-05-06

申请号：US12522857

申请日：2008-01-17

申请人： Kensuke Tanaka ,  Kazuki Iwashita ,  Hiroshi Tsuchiya

发明人： Kensuke Tanaka ,  Kazuki Iwashita ,  Hiroshi Tsuchiya

IPC分类号： H03H9/00

CPC分类号： H03H9/173 ,  H03H9/132 ,  H03H9/174 ,  H03H9/175

摘要： Provided is a thin film piezoelectric resonator which includes a piezoelectric resonator stack (12) having a piezoelectric layer (2), an upper electrode (10) and a lower electrode (8); and a substrate (6) which supports the piezoelectric resonator stack. The piezoelectric resonator stack (12) is provided with a vibration region (18) wherein the upper electrode (10) and the lower electrode (8) face each other through a piezoelectric layer (2) and primary thickness vertical vibration can be performed; and a supporting region (19) supported by the substrate (6). The vibration region (18) has an oval shape with a ratio a/b of 1.1 or more but not more than 1.7, where (a) is a long diameter and (b) is a short diameter. The piezoelectric resonator stack (12) is further provided with an upper dielectric layer (20) formed on the upper electrode (10). When the total of the thickness of the upper electrode (10) and that of the upper dielectric layer (20) in the vibration region (18) is expressed as (c), and the thickness of the piezoelectric layer (2) in the vibration region (18) is expressed as (d), a ratio c/d is 0.25 or more but not more than 0.45.

摘要翻译： 提供一种薄膜压电谐振器，其包括具有压电层（2），上电极（10）和下电极（8）的压电谐振器叠层（12）。 以及支撑压电谐振器叠层的衬底（6）。 压电谐振器叠层（12）设置有振动区域（18），其中上电极（10）和下电极（8）通过压电层（2）彼此面对，并且可以执行初级厚度垂直振动; 以及由所述基板（6）支撑的支撑区域（19）。 振动区域（18）具有比率a / b为1.1以上但不超过1.7的椭圆形状，其中（a）为长径，（b）为短径。 压电谐振器堆叠（12）还设置有形成在上电极（10）上的上电介质层（20）。 当振动区域（18）中的上电极（10）和上电介质层（20）的厚度的总和表示为（c）时，压电层（2）的振动厚度 区域（18）表示为（d），比率c / d为0.25以上且不大于0.45。

公开(公告)号：US06927648B2

公开(公告)日：2005-08-09

申请号：US10451261

申请日：2001-12-21

申请人： Yoshiko Furuya ,  Hiroshi Ichikawa ,  Ryuji Oyama ,  Kazuki Iwashita ,  Koichi Fukuda

发明人： Shinji Furuya

IPC分类号： H03H7/01 ,  H03H7/075 ,  H03H7/46 ,  H03H7/00

CPC分类号： H03H7/1791 ,  H01P1/213 ,  H03H7/0115 ,  H03H7/075 ,  H03H7/463 ,  H03H2001/0085

摘要： Four frequency components (f1 to f4) (where, f1

摘要翻译： 四个频率分量（f 1至f 4）（其中，f 1

公开(公告)号：US06660674B2

公开(公告)日：2003-12-09

申请号：US10011380

申请日：2001-10-22

申请人： Kazuki Iwashita ,  Koichi Fukuda

发明人： Kazuki Iwashita ,  Koichi Fukuda

IPC分类号： C04B3510

CPC分类号： C04B35/478

摘要： A dielectric ceramic composition for high frequency wave having a composition comprising Al, Zr, Ti, Sn and O as a basic composition and represented by compositional formula: aAl2O3-bZrO2-cTiO2-dSnO2 (in which 0.4068

摘要翻译： 一种用于高频波的介电陶瓷组合物，其组合物包含Al，Zr，Ti，Sn和O作为碱性组成并由组成式表示：（其中0.4068

公开(公告)号：US20110298564A1

公开(公告)日：2011-12-08

申请号：US13202442

申请日：2010-02-17

申请人： Kazuki Iwashita ,  Hiroshi Tsuchiya ,  Kensuke Tanaka ,  Takuya Maruyama

发明人： Kazuki Iwashita ,  Hiroshi Tsuchiya ,  Kensuke Tanaka ,  Takuya Maruyama

IPC分类号： H03H9/17 ,  H01L41/047 ,  H01L41/18 ,  H01L41/04

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02133 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/605

摘要： A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f1

摘要翻译： 1.一种薄膜压电谐振器，包括基板（6）; 压电层（2），具有顶部电极（10）和底部电极（8）的压电谐振器叠层（12）和空腔（4）。 压电谐振器叠层（12）具有顶部电极和底部电极在厚度方向上重叠的振动区域（40），振动区域包括第一振动区域，第二振动区域和第三振动区域。 当从厚度方向观察时，第一振动区域存在于最外侧，第三振动区域存在于最内侧并且不与第一振动区域接触，并且第二振动区域介于第一振动区域和第二振动区域之间， 第三振动区域。 振动区域（40）的初始厚度 - 纵向振动的共振频率在第一振动区域为f1，在第三振动区域为f2，其中f1和f2满足f1

公开(公告)号：US07965017B2

公开(公告)日：2011-06-21

申请号：US12438794

申请日：2007-08-24

申请人： Kazuki Iwashita ,  Keigo Nagao ,  Shinji Fukuda

发明人： Kazuki Iwashita ,  Keigo Nagao ,  Shinji Fukuda

IPC分类号： H01L41/09

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02149 ,  H03H9/132 ,  H03H9/174 ,  H03H2003/021

摘要： A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011 cm−2 or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C. or higher is performed under non-oxygenated atmosphere.

摘要翻译： 薄膜压电谐振器抑制反谐振频率下的阻抗恶化并具有高Q值。 薄膜压电谐振器设置有半导体衬底（8）; 形成在与半导体衬底的表面接触的半导体衬底上的绝缘层; 以及在绝缘层的上方形成有绝缘层侧依次具有下电极（10），压电层（2）和上电极（12）的压电谐振器叠层（14）。 对应于压电谐振器叠层（14）的下电极（10）和上电极（12）在厚度方向上彼此重叠的振荡区域形成振荡空间（4）。 绝缘层（6）中的固定电荷密度为1×1011cm -2以下。 在制造薄膜压电谐振器时，绝缘层形成为与半导体衬底接触，然后在非氧化气氛下进行300℃以上的热处理。

公开(公告)号：US20090322186A1

公开(公告)日：2009-12-31

申请号：US12438794

申请日：2007-08-24

申请人： Kazuki Iwashita ,  Keigo Nagao ,  Shinji Fukuda

发明人： Kazuki Iwashita ,  Keigo Nagao ,  Shinji Fukuda

IPC分类号： H01L41/053

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02149 ,  H03H9/132 ,  H03H9/174 ,  H03H2003/021

摘要： A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011 cm−2 or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C. or higher is performed under non-oxygenated atmosphere.

摘要翻译： 薄膜压电谐振器抑制反谐振频率下的阻抗恶化并具有高Q值。 薄膜压电谐振器设置有半导体衬底（8）; 形成在与半导体衬底的表面接触的半导体衬底上的绝缘层; 以及在绝缘层的上方形成有绝缘层侧依次具有下电极（10），压电层（2）和上电极（12）的压电谐振器叠层（14）。 对应于压电谐振器叠层（14）的下电极（10）和上电极（12）在厚度方向上彼此重叠的振荡区域形成振荡空间（4）。 绝缘层（6）中的固定电荷密度为1×10 11 cm -2以下。 在制造薄膜压电谐振器时，绝缘层形成为与半导体衬底接触，然后在非氧化气氛下进行300℃以上的热处理。