Embodiments of this doping method may be used to improve junction formation. An implant species, such as helium or another noble gas, is implanted into a workpiece to a first depth. A dopant is deposited on a surface of the workpiece. During an anneal, the dopant diffuses to the first depth. The noble gas ions may at least partially amorphize the workpiece during the implant. The workpiece may be planar or non-planar. The implant and deposition may occur in a system without breaking vacuum.