发明申请
US20110303891A1 Mixed Alloy Defect Redirection Region and Devices Including Same
有权
混合合金缺陷重定向区域和包含相同的设备
- 专利标题: Mixed Alloy Defect Redirection Region and Devices Including Same
- 专利标题(中): 混合合金缺陷重定向区域和包含相同的设备
-
申请号: US13096457申请日: 2011-04-28
-
公开(公告)号: US20110303891A1公开(公告)日: 2011-12-15
- 发明人: Christopher L. Chua , Zhihong Yang , Noble M. Johnson
- 申请人: Christopher L. Chua , Zhihong Yang , Noble M. Johnson
- 申请人地址: US CA Palo Alto
- 专利权人: PALO ALTO RESEARCH CENTER INCORPORATED
- 当前专利权人: PALO ALTO RESEARCH CENTER INCORPORATED
- 当前专利权人地址: US CA Palo Alto
- 主分类号: H01L33/04
- IPC分类号: H01L33/04
摘要:
An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A mixed alloy defect redirection region is provided over the template layer such that the composition of the defect redirection region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the defect redirection region may be tailored to provide a stepped or gradual Aluminum content from template to active layer. Strain-induced cracking and defect density are reduced or eliminated.
公开/授权文献
信息查询
IPC分类: