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    Method For Preparing Films And Devices Under High Nitrogen Chemical Potential
    2.
    发明申请
    Method For Preparing Films And Devices Under High Nitrogen Chemical Potential 审中-公开
    在高氮化学势下制备薄膜和器件的方法

    公开(公告)号：US20100006023A1

    公开(公告)日：2010-01-14

    申请号：US12171623

    申请日：2008-07-11

    申请人： David P. Bour ,  Peter Kiesel ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang ,  John E. Northrup

    发明人： David P. Bour ,  Peter Kiesel ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang ,  John E. Northrup

    IPC分类号： C30B23/02 ,  C30B35/00

    CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403

    摘要： Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen vacancies in the growing film are reduced. A reactor design, and method for its use, provide high nitrogen precursor partial pressure, precracking of the precursor using a catalytic metal surface, prepyrolyzing the precursor, using catalytically-cracked molecular nitrogen as a nitrogen precursor, and/or exposing the surface to an ambient which is extremely rich in active nitrogen species. Improved efficiency for light emitting devices, particularly in the blue and green wavelengths and improve transport properties in nitride electronic devices, i.e., improved performance from nitride-based devices such as InGaAlN laser diodes, transistors, and light emitting diodes is thereby provided.

    摘要翻译： 氮化物半导体膜，例如用于固态发光器件和电子器件的氮化物半导体膜，在氮势高的环境下制造，使得生长膜中的氮空位减少。 反应器设计及其使用方法提供高氮前体分压，使用催化金属表面预裂化前体，使用催化裂化的分子氮作为氮前体预先分解前体，和/或将表面暴露于 非常丰富的活性氮种类的环境。 因此，提供了发光器件的效率，特别是蓝色和绿色波长的效率，并提高了氮化物电子器件的传输性能，即从诸如InGaAlN激光二极管，晶体管和发光二极管的氮化物基器件的改进性能。

    Mixed Alloy Defect Redirection Region and Devices Including Same
    5.
    发明申请
    Mixed Alloy Defect Redirection Region and Devices Including Same 有权
    混合合金缺陷重定向区域和包含相同的设备

    公开(公告)号：US20110303891A1

    公开(公告)日：2011-12-15

    申请号：US13096457

    申请日：2011-04-28

    申请人： Christopher L. Chua ,  Zhihong Yang ,  Noble M. Johnson

    发明人： Christopher L. Chua ,  Zhihong Yang ,  Noble M. Johnson

    IPC分类号： H01L33/04

    CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/04 ,  H01L33/12

    摘要： An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A mixed alloy defect redirection region is provided over the template layer such that the composition of the defect redirection region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the defect redirection region may be tailored to provide a stepped or gradual Aluminum content from template to active layer. Strain-induced cracking and defect density are reduced or eliminated.

    摘要翻译： 在其上形成有对于光学器件的发射波长透明的诸如AlN的模板层的透明基板上形成诸如发光二极管的光学半导体器件。 在模板层上提供混合合金缺陷重定向区域，使得缺陷重定向区域的组成接近或匹配与其邻接的区域的组成。 例如，可以调整缺陷重定向区域的Al含量以提供从模板到活性层的阶梯状或渐变的铝含量。 应变诱发的裂纹和缺陷密度降低或消除。