发明申请
US20110303912A1 Methods Of Manufacturing P-Type Zn Oxide Nanowires And Electronic Devices Including P-Type Zn Oxide Nanowires
审中-公开
制造P型氧化锌纳米线和包括P型氧化锌纳米线的电子器件的方法
- 专利标题： Methods Of Manufacturing P-Type Zn Oxide Nanowires And Electronic Devices Including P-Type Zn Oxide Nanowires
- 专利标题（中）： 制造P型氧化锌纳米线和包括P型氧化锌纳米线的电子器件的方法
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申请号： US13107151申请日： 2011-05-13
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公开(公告)号： US20110303912A1公开(公告)日： 2011-12-15
- 发明人: Seung-nam Cha , Young-jun Park , Jin-pyo Hong
- 申请人： Seung-nam Cha , Young-jun Park , Jin-pyo Hong
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0055108 20100610
- 主分类号： H01L29/22
- IPC分类号： H01L29/22 ; H01L21/208 ; B82Y99/00 ; B82Y40/00
摘要：
Example embodiments relate to methods of manufacturing p-type Zn oxide nanowires and electronic devices including the p-type Zn oxide nanowires. The method may include forming Zn oxide nanowires in an aqueous solution by using a hydrothermal synthesis method and annealing the Zn oxide nanowires to form p-type Zn oxide nanowires.